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Fall Time: 8 ns
Rise Time: 11 ns
Technology: SiC
Unit Weight: 1.450 g
Channel Mode: Enhancement
Mounting Style: SMD/SMT
Qg - Gate Charge: 118 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 408 W
Vgs - Gate-Source Voltage: - 15 V, + 15 V
Typical Turn-On Delay Time: 29 ns
Typical Turn-Off Delay Time: 19 ns
Id - Continuous Drain Current: 85 A
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 23.6 S
Rds On - Drain-Source Resistance: 34 mOhms
Vds - Drain-Source Breakdown Voltage: 1.2 kV
Vgs th - Gate-Source Threshold Voltage: 2.7 V
