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Fall Time: 10 ns
Rise Time: 15 ns
Technology: SiC
Unit Weight: 1.450 g
Channel Mode: Enhancement
Mounting Style: SMD/SMT
Qg - Gate Charge: 88 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 330 W
Vgs - Gate-Source Voltage: - 15 V, + 15 V
Typical Turn-On Delay Time: 27 ns
Typical Turn-Off Delay Time: 18 ns
Id - Continuous Drain Current: 66 A
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 18.1 S
Rds On - Drain-Source Resistance: 45 mOhms
Vds - Drain-Source Breakdown Voltage: 1.2 kV
Vgs th - Gate-Source Threshold Voltage: 2.7 V
