Infineon IGW50N65F5 IGBT Transistors ENGINEERING SAMPLES TRENCHSTOP-5 IGBT
Manufacturer: Infineon Model: IGW50N65F5 - Contact
Call for the best price
Hanoi city: (024) 35.381.269
Danang city: (023) 63.747.711
Bac Ninh city: (0222)730.39.68
HCM city: (028) 38.119.636
Technology: Si
Unit Weight: 6.055 g
Configuration: Single
Mounting Style: Through Hole
Pd - Power Dissipation: 305 W
Gate-Emitter Leakage Current: 100 nA
Maximum Gate Emitter Voltage: - 20 V, 20 V
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 40 C
Collector- Emitter Voltage VCEO Max: 650 V
Collector-Emitter Saturation Voltage: 1.6 V
Continuous Collector Current at 25 C: 80 A
- Quality Engagement
- Easy change and return
- Delivery Avaliable
- Favorable payment