Infineon AIMCQ120R080M1TXTMA1 SiC MOSFETS Tailored to address OBC/DC-DC applications for 800V Automotive architecture
Manufacturer: Infineon Model: AIMCQ120R080M1TXTMA1 - Contact
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Fall Time: 11.1 ns
Rise Time: 4 ns
Technology: SiC
Channel Mode: Enhancement
Configuration: Single
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel
Qg - Gate Charge: 24 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 211 W
Vgs - Gate-Source Voltage: - 10 V, + 25 V
Typical Turn-On Delay Time: 6.6 ns
Typical Turn-Off Delay Time: 11.8 ns
Id - Continuous Drain Current: 34 A
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 100 mOhms
Vds - Drain-Source Breakdown Voltage: 1.2 kV
Vgs th - Gate-Source Threshold Voltage: 5.1 V
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