Infineon BSC098N10NS5 MOSFETs Pwr transistor 100V OptiMOS 5
Manufacturer: Infineon Model: BSC098N10NS5 - Contact
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Width: 5.15 mm
Height: 1.27 mm
Length: 5.9 mm
Fall Time: 4 ns
Rise Time: 5 ns
Technology: Si
Unit Weight: 104.400 mg
Channel Mode: Enhancement
REACH - SVHC: Details
Configuration: Single
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel
Qg - Gate Charge: 22 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 69 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 10 ns
Typical Turn-Off Delay Time: 17 ns
Id - Continuous Drain Current: 60 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 28 S
Rds On - Drain-Source Resistance: 9.8 mOhms
Vds - Drain-Source Breakdown Voltage: 100 V
Vgs th - Gate-Source Threshold Voltage: 2.2 V
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