Infineon BSD235CH6327XTSA1 Dual MOSFET, Complementary N and P Channel, 20 V, 20 V, 950 mA, 950 mA, 0.266 ohm

No. of Pins: 6

Channel Type: Complementary

Product Range: OptiMOS™ 2 + OptiMOS™-P 2 Series

Qualification: AEC-Q101

Transistor Case Style: SOT-363

Operating Temperature Max: 150 °C

Power Dissipation N Channel: 500 mW

Power Dissipation P Channel: 500 mW

Drain Source Voltage Vds N Channel: 20 V

Drain Source Voltage Vds P Channel: 20 V

Continuous Drain Current Id N Channel: 950 mA

Continuous Drain Current Id P Channel: 530 mA

Drain Source On State Resistance N Channel: 350 mOhm

Drain Source On State Resistance P Channel: 1.2 Ohm

Datasheet