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Infineon DF120R12W2H3B27BOMA1 IGBT Module N-Ch 1200V 40A

ModelDF120R12W2H3B27BOMA1
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IGBT Technology: IGBT 3 High Sp

IGBT Termination: Press Fit

Power Dissipation: 180

IGBT Configuration: Triple

Transistor Mounting: Clamp Mount

Transistor Case Style: Module

Operating Temperature Max: 150 °C

Continuous Collector Current: 50

Collector Emitter Voltage Max: 1.2

Collector Emitter Saturation Voltage: 2.05

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