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Infineon F3L75R12W1H3B11BPSA1 IGBT Transistors 1200 V, 75 A 3-level IGBT module

Name: Infineon F3L75R12W1H3B11BPSA1 IGBT Transistors 1200 V, 75 A 3-level IGBT module
Brand: Infineon

ModelF3L75R12W1H3B11BPSA1

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Technology: Si

Unit Weight: 24 g

Configuration: Quad

Mounting Style: Screw Mount

Pd - Power Dissipation: 275 W

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Collector-Emitter Saturation Voltage: 1.45 V

Continuous Collector Current at 25 C: 75 A