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Infineon F3L75R12W1H3B27BOMA1 IGBT Module

ModelF3L75R12W1H3B27BOMA1
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IGBT Technology: IGBT 3 High Sp

IGBT Termination: Press Fit

Power Dissipation: 275

IGBT Configuration: 3-Level

Transistor Mounting: Clamp Mount

Transistor Case Style: Module

Operating Temperature Max: 150 °C

Continuous Collector Current: 45

Collector Emitter Voltage Max: 1.2

Collector Emitter Saturation Voltage: 1.45

Datasheet


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