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Infineon FF200R17KE3S4HOSA1 IGBTs

ModelFF200R17KE3S4HOSA1
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IGBT Technology: IGBT 3 [Trench

IGBT Termination: Stud

Power Dissipation: 1.25

IGBT Configuration: Dual

Transistor Mounting: Screw Mount

Transistor Case Style: Module

Operating Temperature Max: 125 °C

Continuous Collector Current: 310

Collector Emitter Voltage Max: 1.7

Collector Emitter Saturation Voltage: 2

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