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Infineon FF300R08W2P2B11ABOMA1 IGBT Silicon Modules EASY PACK SI | EMIN.ASIA

Discrete & Power Modules
Infineon FF300R08W2P2B11ABOMA1 IGBT Silicon Modules EASY PACK SI

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Infineon FF300R08W2P2B11ABOMA1 IGBT Silicon Modules EASY PACK SI

ManufacturerInfineon(View more products from this manufacturer)

ModelFF300R08W2P2B11ABOMA1

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Technology: Si

Configuration: Dual

Gate-Emitter Leakage Current: 10 nA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 750 V

Collector-Emitter Saturation Voltage: 1 V

Continuous Collector Current at 25 C: 200 A

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