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Infineon FF4MR12W2M1HPB11BPSA1 Half Bridge CoolSiC MOSFET half-bridge module 1200 V

ModelFF4MR12W2M1HPB11BPSA1
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Technology: Si

Configuration: Dual

Vgs - Gate-Source Voltage: - 10 V, + 23 V

Id - Continuous Drain Current: 170 A

Vds - Drain-Source Breakdown Voltage: 1.2 kV

Vgs th - Gate-Source Threshold Voltage: 5.15 V

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