Infineon FF900R12ME7WBPSA1 IGBT Modules MEDIUM POWER ECONO
ManufacturerInfineon(View more products from this manufacturer)
ModelFF900R12ME7WBPSA1
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Technology: Si
Configuration: Single
Mounting Style: Press Fit
Pd - Power Dissipation: 20 mW
Gate-Emitter Leakage Current: 100 nA
Maximum Gate Emitter Voltage: 20 V
Collector- Emitter Voltage VCEO Max: 1.2 kV
Collector-Emitter Saturation Voltage: 1.5 V
Continuous Collector Current at 25 C: 890 A
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