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Infineon FP35R12KT4BOSA1 LOW POWER ECONO

ModelFP35R12KT4BOSA1
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IGBT Technology: IGBT 4 [Trench

IGBT Termination: Press Fit|Stud

Power Dissipation: 210

IGBT Configuration: PIM Three Phas

Transistor Mounting: Screw Mount

Transistor Case Style: EconoPIM

Operating Temperature Max: 150 °C

Continuous Collector Current: 35

Collector Emitter Voltage Max: 1.2

Collector Emitter Saturation Voltage: 1.85

Datasheet


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