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Infineon FS100R07N2E4BPSA1 IGBT Silicon Modules 650 V, 100 A sixpack IGBT module

Name: Infineon FS100R07N2E4BPSA1 IGBT Silicon Modules 650 V, 100 A sixpack IGBT module
Brand: Infineon

ModelFS100R07N2E4BPSA1

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Technology: Si

Configuration: 6-Pack

Pd - Power Dissipation: 335 W

Gate-Emitter Leakage Current: 400 nA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 650 V

Collector-Emitter Saturation Voltage: 1.55 V

Continuous Collector Current at 25 C: 100 A