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Technology: Si
Configuration: Triple
Mounting Style: Screw Mount
Pd - Power Dissipation: 2.4 MW
Gate-Emitter Leakage Current: 400 nA
Maximum Gate Emitter Voltage: 26.25 V
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 40 C
Collector- Emitter Voltage VCEO Max: 4.3 kV
Collector-Emitter Saturation Voltage: 2.55 V
Continuous Collector Current at 25 C: 1.2 kA
