Stay Updated with Offers

Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.

By subscribing, you agree to our Terms of Service and Privacy Policy.

Quick Support

Direct access to our certified experts

Infineon GS66508T-MR GaN FETs 650V, 30A, GaN E-mode, GaNPX package, Top-side cooled

Name: Infineon GS66508T-MR GaN FETs 650V, 30A, GaN E-mode, GaNPX package, Top-side cooled
Brand: Infineon

ModelGS66508T-MR

Contact

Quantity

Secure Checkout

Quality Engagement

Easy change and return

Delivery Available

Fall Time: 5.2 ns

Rise Time: 3.7 ns

Technology: GaN-on-Si

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Development Kit: GS665MB--EVB, GS66508T-EVBDB2

Transistor Type: E-Mode

Qg - Gate Charge: 6.1 nC

Moisture Sensitive: Yes

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Vgs - Gate-Source Voltage: - 10 V, + 7 V

Typical Turn-On Delay Time: 4.1 ns

Maximum Operating Frequency: > 10 MHz

Minimum Operating Frequency: 0 Hz

Typical Turn-Off Delay Time: 8 ns

Id - Continuous Drain Current: 30 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 63 mOhms

Vds - Drain-Source Breakdown Voltage: 650 V

Vgs th - Gate-Source Threshold Voltage: 1.1 V