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Infineon IKD10N60RC2ATMA1 IGBT Transistors 600 V, 10 A IGBT Discrete with Reverse Conducting Drive 2-diode in TO-252 package

Name: Infineon IKD10N60RC2ATMA1 IGBT Transistors 600 V, 10 A IGBT Discrete with Reverse Conducting Drive 2-diode in TO-252 package
Brand: Infineon

ManufacturerInfineon(View more products from this manufacturer)

ModelIKD10N60RC2ATMA1

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Technology: Si

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Pd - Power Dissipation: 79 W

Gate-Emitter Leakage Current: 100 nA

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 600 V

Collector-Emitter Saturation Voltage: 2 V

Continuous Collector Current at 25 C: 18.8 A