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Infineon IKW50N65RH5XKSA1 IGBT Transistors 650 V, 50 A IGBT Discrete with Silicon Carbide Schottky diode

Name: Infineon IKW50N65RH5XKSA1 IGBT Transistors 650 V, 50 A IGBT Discrete with Silicon Carbide Schottky diode
Brand: Infineon

ModelIKW50N65RH5XKSA1

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Technology: Si

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 305 W

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 650 V

Collector-Emitter Saturation Voltage: 1.65 V

Continuous Collector Current at 25 C: 80 A