Infineon IMYH200R100M1HXKSA1 Silicon Carbide MOSFET, Single, N Channel, 26 A, 2 kV, 131 Milliohms, TO-247 Plus, 4 Pins
ManufacturerInfineon(View more products from this manufacturer)
ModelIMYH200R100M1HXKSA1
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No. of Pins: 4
Channel Type: N Channel
Power Dissipation: 217 W
RDS(ON) Test Voltage: 18 V
Transistor Case Style: TO-247 Plus
Drain Source Voltage Vds: 2 kV
Operating Temperature Max: 175 °C
Continuous Drain Current Id: 26 A
Mosfet Module Configuration: Single
Drain Source On State Resistance: 131 mOhm
Gate Source Threshold Voltage Max: 5.5 V
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