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Vgs(th): 2.2 V
Vgs (Max): +5|-16V
Gate Charge (Qg): 176nC
Power consumption: 125W
Technology System: MOSFET(Metal Oxide)
Drain to Source voltage: 40V
Continuous drain current: 80A
Input Capacitance (Ciss): 3800pF
Operating temperature range: -55 to 175C
Field-effect transistor type: P-CH
Drain to Source on-state resistance: 4.7mOhm
Drive Voltage (Max Rds On, Min Rds On): 4.5|10V
