Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.
By subscribing, you agree to our Terms of Service and Privacy Policy.
Direct access to our certified experts
Vgs(th): 4 V
Vgs (Max): 20V
Gate Charge (Qg): 64nC
Power consumption: 125W
Technology System: MOSFET(Metal Oxide)
Drain to Source voltage: 85V
Continuous drain current: 67A
Input Capacitance (Ciss): 4340pF
Operating temperature range: -55 to 175C
Field-effect transistor type: N-CH
Drain to Source on-state resistance: 12.9mOhm
Drive Voltage (Max Rds On, Min Rds On): 10V
