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Infineon IPT012N06NATMA1 DIFFERENTIATED MOSFETS

Name: Infineon IPT012N06NATMA1 DIFFERENTIATED MOSFETS
Brand: Infineon

ModelIPT012N06NATMA1

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Channel Type: N Channel

Power Dissipation: 214

Transistor Mounting: Surface Mount

Transistor Case Style: HSOF

Drain Source Voltage Vds: 60

Operating Temperature Max: 175 °C

Continuous Drain Current Id: 313

Drain Source On State Resistance: 1.2

Gate Source Threshold Voltage Max: 3.3

Datasheet