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Infineon IPW60R099C7XKSA1 MOS Power Transistors HV (>= 200V)

Name: Infineon IPW60R099C7XKSA1 MOS Power Transistors HV (>= 200V)
Brand: Infineon

ModelIPW60R099C7XKSA1

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Channel Type: N Channel

Power Dissipation: 110

Transistor Mounting: Through Hole

Transistor Case Style: TO-247

Drain Source Voltage Vds: 650

Operating Temperature Max: 150 °C

Continuous Drain Current Id: 22

Drain Source On State Resistance: 99

Gate Source Threshold Voltage Max: 4

Datasheet