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Infineon P3000ZL45X168HPSA1 IGBT Silicon Modules PRESS PACK IGBT

ModelP3000ZL45X168HPSA1
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Technology: Si

Mounting Style: Press Fit

Gate-Emitter Leakage Current: 350 nA

Maximum Gate Emitter Voltage: 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 4.5 kV

Collector-Emitter Saturation Voltage: 2.25 V

Continuous Collector Current at 25 C: 3 kA

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