Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.
By subscribing, you agree to our Terms of Service and Privacy Policy.
Direct access to our certified experts
Technology: Si
Unit Weight: 2.176 g
Configuration: Dual
Mounting Style: Through Hole
Transistor Polarity: N-Channel
Pd - Power Dissipation: 500 mW (1/2 W)
Gate-Source Cutoff Voltage: - 6 V
Drain-Source Current at Vgs=0: 60 mA
Id - Continuous Drain Current: 1 nA
Forward Transconductance - Min: 10 mS
Vgs - Gate-Source Breakdown Voltage: - 25 V
Vds - Drain-Source Breakdown Voltage: 10 V
