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Fall Time: 35 ns
Rise Time: 28 ns
Technology: Si
Channel Mode: Enhancement
Configuration: Single
Mounting Style: SMD/SMT
Qg - Gate Charge: 120 nC
Number of Channels: 1 Channel
Pd - Power Dissipation: 660 W
Vgs - Gate-Source Voltage: - 30 V, + 30 V
Typical Turn-On Delay Time: 35 ns
Typical Turn-Off Delay Time: 66 ns
Id - Continuous Drain Current: 16 A
Forward Transconductance - Min: 11 S
Rds On - Drain-Source Resistance: 960 mOhms
Vds - Drain-Source Breakdown Voltage: 1.2 kV
Vgs th - Gate-Source Threshold Voltage: 3.5 V
