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Width: 4.9 mm
Height: 16.07 mm
Length: 10.36 mm
Fall Time: 28 ns
Rise Time: 19 ns
Technology: Si
Unit Weight: 2 g
Channel Mode: Enhancement
Configuration: Single
Mounting Style: Through Hole
Transistor Type: 1 N-Channel
Qg - Gate Charge: 7.8 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 25 W
Vgs - Gate-Source Voltage: - 30 V, + 30 V
Typical Turn-On Delay Time: 11 ns
Typical Turn-Off Delay Time: 40 ns
Id - Continuous Drain Current: 700 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 0.55 S
Rds On - Drain-Source Resistance: 15 Ohms
Vds - Drain-Source Breakdown Voltage: 1 kV
Vgs th - Gate-Source Threshold Voltage: 4.5 V
