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IXYS MIXA60WH1200TEH IGBT Modules 1200V XPT CBI XPT | EMIN.ASIA

Discrete & Power Modules
IXYS MIXA60WH1200TEH IGBT Modules 1200V XPT CBI XPT

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IXYS MIXA60WH1200TEH IGBT Modules 1200V XPT CBI XPT

ManufacturerIXYS(View more products from this manufacturer)

ModelMIXA60WH1200TEH

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Technology: Si

Pd - Power Dissipation: 195 W

Gate-Emitter Leakage Current: 500 nA

Maximum Gate Emitter Voltage: 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Continuous Collector Current at 25 C: 60 A

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