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Width: 23.25 mm
Height: 5.7 mm
Length: 25.25 mm
Fall Time: 265 ns
Rise Time: 170 ns
Technology: Si
Unit Weight: 8 g
Channel Mode: Enhancement
Mounting Style: SMD/SMT
Qg - Gate Charge: 715 nC
Transistor Polarity: N-Channel
Pd - Power Dissipation: 680 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 50 ns
Typical Turn-Off Delay Time: 115 ns
Id - Continuous Drain Current: 235 A
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 140 S
Rds On - Drain-Source Resistance: 4.4 mOhms
Vds - Drain-Source Breakdown Voltage: 150 V
Vgs th - Gate-Source Threshold Voltage: 5 V
