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Throughput: 50 wafers/h with 16 profile measurement points, notch/flat and diameter measurement
MTBF: 1000 h
MTTR: < 4 h
Accuracy (Radii): ± 2 µm (standard deviation 1 µm)
Accuracy (Half angles): ± 0.3° (standard deviation 0.1°)
Accuracy (Blunt lengths): ± 3 µm (standard deviation 2 µm)
Accuracy (Facet lengths): ± 3 µm (standard deviation 2 µm)
Profile deformation: > 8 µm
Control interface: Ethernet
Input voltage: 88 to 264 VAC, 47 to 63 Hz
CDA: 0.6 MPa (87 psi)
Operating temperature: 20 to 24 °C
Diameters: 12 (150/200 mm)
Options: FFU
Options: Console
Options: Light tower
Options: GEM-SECS-II Interface
