Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.
By subscribing, you agree to our Terms of Service and Privacy Policy.
Direct access to our certified experts
Type: Power MOSFET
Vgs(th): 6.5 V
Vgs (Max): 30V
Gate Charge (Qg): 90nC
Power consumption: 830W
Technology System: MOSFET(Metal Oxide)
Drain to Source voltage: 1000V
Continuous drain current: 18A
Input Capacitance (Ciss): 4890pF
Operating temperature range: -55 to 150C
Field-effect transistor type: N-CH
Drain to Source on-state resistance: 660mOhm
Drive Voltage (Max Rds On, Min Rds On): 10V
