Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.
By subscribing, you agree to our Terms of Service and Privacy Policy.
Direct access to our certified experts
Type: Power MOSFET
Vgs(th): 6.5 V
Vgs (Max): 30V
Gate Charge (Qg): 130nC
Power consumption: 660W
Technology System: MOSFET(Metal Oxide)
Drain to Source voltage: 900V
Continuous drain current: 24A
Input Capacitance (Ciss): 7200pF
Operating temperature range: -55 to 150C
Field-effect transistor type: N-CH
Drain to Source on-state resistance: 420mOhm
Drive Voltage (Max Rds On, Min Rds On): 10V
