Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.
By subscribing, you agree to our Terms of Service and Privacy Policy.
Direct access to our certified experts
Vgs(th): 5.5 V
Vgs (Max): 20V
Gate Charge (Qg): 195nC
Power consumption: 560W
Technology System: MOSFET(Metal Oxide)
Drain to Source voltage: 1000V
Continuous drain current: 24A
Input Capacitance (Ciss): 6600pF
Operating temperature range: -55 to 150C
Field-effect transistor type: N-CH
Drain to Source on-state resistance: 390mOhm
Drive Voltage (Max Rds On, Min Rds On): 10V
