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MACOM CGHV1J025D-GP4 GaN HEMTs GaN HEMT Die DC-18GHz, 25 Watt | EMIN.ASIA

GaN FETs
MACOM CGHV1J025D-GP4 GaN HEMTs GaN HEMT Die DC-18GHz, 25 Watt

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MACOM CGHV1J025D-GP4 GaN HEMTs GaN HEMT Die DC-18GHz, 25 Watt

ManufacturerMACOM(View more products from this manufacturer)

ModelCGHV1J025D-GP4

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Gain: 17 dB

Technology: GaN

Unit Weight: 2.285 g

Output Power: 25 W

Mounting Style: SMD/SMT

Transistor Type: GaN HEMT

Number of Channels: 4 Channel

Transistor Polarity: N-Channel

Maximum Operating Frequency: 18 GHz

Minimum Operating Frequency: 10 MHz

Id - Continuous Drain Current: 2 A

Rds On - Drain-Source Resistance: 600 mOhms

Vgs - Gate-Source Breakdown Voltage: - 10 V to 2 V

Vds - Drain-Source Breakdown Voltage: 100 V

Vgs th - Gate-Source Threshold Voltage: - 3 V

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