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MACOM GTRA362002FC-V1-R0 GaN FETs 200W GaN HEMT 48V 3400 to 3600MHz | EMIN.ASIA

GaN FETs
MACOM GTRA362002FC-V1-R0 GaN FETs 200W GaN HEMT 48V 3400 to 3600MHz

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MACOM GTRA362002FC-V1-R0 GaN FETs 200W GaN HEMT 48V 3400 to 3600MHz

ManufacturerMACOM(View more products from this manufacturer)

ModelGTRA362002FC-V1-R0

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Gain: 13.5 dB

Technology: GaN

Output Power: 200 W

Mounting Style: Screw Mount

Transistor Type: GaN HEMT

Transistor Polarity: N-Channel

Maximum Operating Frequency: 3.6 GHz

Minimum Operating Frequency: 3.4 GHz

Id - Continuous Drain Current: 4.1 A

Maximum Operating Temperature: + 225 C

Vgs - Gate-Source Breakdown Voltage: - 10 V to 2 V

Vds - Drain-Source Breakdown Voltage: 150 V

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