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MACOM GTVA107001EC-V1-R250 GaN FETs GaN HEMT 50V 0.9-1.2GHz 700W | EMIN.ASIA

GaN FETs
MACOM GTVA107001EC-V1-R250 GaN FETs GaN HEMT 50V 0.9-1.2GHz 700W

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MACOM GTVA107001EC-V1-R250 GaN FETs GaN HEMT 50V 0.9-1.2GHz 700W

ManufacturerMACOM(View more products from this manufacturer)

ModelGTVA107001EC-V1-R250

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Gain: 18 dB

Technology: GaN

Output Power: 890 W

Mounting Style: Screw Mount

Transistor Type: GaN HEMT

Transistor Polarity: N-Channel

Maximum Operating Frequency: 1.215 GHz

Minimum Operating Frequency: 960 MHz

Id - Continuous Drain Current: 10 A

Vgs - Gate-Source Breakdown Voltage: - 10 V to 2 V

Vds - Drain-Source Breakdown Voltage: 150 V

Vgs th - Gate-Source Threshold Voltage: - 3 V

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