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MACOM GTVA261701FA-V1-R2 GaN FETs RF LDMOS FET | EMIN.ASIA

GaN FETs
MACOM GTVA261701FA-V1-R2 GaN FETs RF LDMOS FET

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MACOM GTVA261701FA-V1-R2 GaN FETs RF LDMOS FET

ManufacturerMACOM(View more products from this manufacturer)

ModelGTVA261701FA-V1-R2

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Gain: 17 dB

Technology: GaN

Output Power: 170 W

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: GaN HEMT

Transistor Polarity: N-Channel

Maximum Operating Frequency: 2.69 GHz

Minimum Operating Frequency: 2.62 GHz

Id - Continuous Drain Current: 7.5 A

Maximum Operating Temperature: + 225 C

Vds - Drain-Source Breakdown Voltage: 150 V

Vgs th - Gate-Source Threshold Voltage: - 3.8 V

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