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Gain: 17 dB
Technology: GaN
Output Power: 340 W
Configuration: Dual Common Source
Mounting Style: SMD/SMT
Transistor Type: GaN HEMT
Transistor Polarity: N-Channel
Maximum Operating Frequency: 2.69 GHz
Minimum Operating Frequency: 2.62 GHz
Id - Continuous Drain Current: 7.5 A
Maximum Operating Temperature: + 225 C
Vds - Drain-Source Breakdown Voltage: 150 V
Vgs th - Gate-Source Threshold Voltage: - 3.8 V
