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Gain: 21 dB
Technology: Si
Unit Weight: 5.887 g
Output Power: 28 W
Mounting Style: SMD/SMT
Transistor Type: LDMOS FET
Number of Channels: 2 Channel
Operating Frequency: 1.8 GHz to 2.2 GHz
Transistor Polarity: Dual N-Channel
Vgs - Gate-Source Voltage: 10 V
Id - Continuous Drain Current: 10 mA
Maximum Operating Temperature: + 225 C
Rds On - Drain-Source Resistance: 50 mOhms
Vds - Drain-Source Breakdown Voltage: 65 V
