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Gain: 19.5 dB
Technology: Si
Unit Weight: 4.212 g
Output Power: 5 W
Mounting Style: SMD/SMT
Transistor Type: LDMOS FET
Moisture Sensitive: Yes
Number of Channels: 1 Channel
Operating Frequency: 900 MHz to 2.7 GHz
Transistor Polarity: N-Channel
Vgs - Gate-Source Voltage: 10 V
Id - Continuous Drain Current: 10 mA
Maximum Operating Temperature: + 225 C
Rds On - Drain-Source Resistance: 2 Ohms
Vds - Drain-Source Breakdown Voltage: 65 V
