Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.
By subscribing, you agree to our Terms of Service and Privacy Policy.
Direct access to our certified experts
Gain: 23.6 dB
Technology: Si
Output Power: 370 W
Mounting Style: SMD/SMT
Transistor Type: LDMOS FET
Moisture Sensitive: Yes
Number of Channels: 1 Channel
Operating Frequency: 755 MHz to 805 MHz
Transistor Polarity: N-Channel
Vgs - Gate-Source Voltage: + 10 V
Maximum Operating Temperature: + 225 C
Rds On - Drain-Source Resistance: 120 mOhms
Vds - Drain-Source Breakdown Voltage: 105 V
