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Gain: 10 dB
Technology: Si
Output Power: 100 W
Configuration: Dual
Mounting Style: SMD/SMT
Operating Frequency: 100 MHz to 500 MHz
Transistor Polarity: N-Channel
Pd - Power Dissipation: 250 W
Vgs - Gate-Source Voltage: 20 V
Id - Continuous Drain Current: 12 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 1.5 S
Vds - Drain-Source Breakdown Voltage: 65 V
Vgs th - Gate-Source Threshold Voltage: 6 V
