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Mounting Type: Through Hole
Power-Maximum: 300mW
Transistor type: NPN-Prebias+Diode
Frequency-Transition: 250MHz
Resistance-Base (R1): 10kOhms
Vce Saturation (maximum): 300mV@500uA,10mA
Resistance-Emitter base (R2): 10kOhms
DC current gain (hFE) (minimum): 30@5mA,5V
Current-Collector (Ic) (maximum): 100mA
Current-Collector cutoff (maximum): 500nA
Voltage-Collector-emitter breakdown (maximum): 50V
