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Technology: Si
Configuration: Dual Common Emitter
Pd - Power Dissipation: 500 W, 250 W
Gate-Emitter Leakage Current: 240 nA, 600 nA
Maximum Gate Emitter Voltage: 20 V
Maximum Operating Temperature: + 100 C
Minimum Operating Temperature: - 40 C
Collector- Emitter Voltage VCEO Max: 1.2 kV, 600 V
Collector-Emitter Saturation Voltage: 2.05 V, 1.5 V
Continuous Collector Current at 25 C: 150 A, 100 A
