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Technology: Si
Configuration: Half Bridge
Mounting Style: Press Fit
Pd - Power Dissipation: 416 W
Gate-Emitter Leakage Current: 150 nA
Maximum Gate Emitter Voltage: - 20 V, 20 V
Maximum Operating Temperature: + 125 C
Minimum Operating Temperature: - 40 C
Collector- Emitter Voltage VCEO Max: 1.2 kV
Collector-Emitter Saturation Voltage: 1.8 V
Continuous Collector Current at 25 C: 155 A
