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Fall Time: 15 ns, 15 ns
Rise Time: 15 ns, 15 ns
Technology: Si
Unit Weight: 41.400 mg
Channel Mode: Enhancement
Configuration: Quad
Mounting Style: SMD/SMT
Transistor Type: 2 N-Channel, 2 P-Channel
Moisture Sensitive: Yes
Number of Channels: 4 Channel
Transistor Polarity: N-Channel, P-Channel
Typical Turn-On Delay Time: 10 ns, 10 ns
Typical Turn-Off Delay Time: 20 ns, 20 ns
Id - Continuous Drain Current: 2.3 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 400 mS, 400 mS
Rds On - Drain-Source Resistance: 6 Ohms, 7 Ohms
Vds - Drain-Source Breakdown Voltage: 200 V
Vgs th - Gate-Source Threshold Voltage: 1 V
