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Vgs(th): 2 V
Vgs (Max): 20V
Power consumption: 360mW
Technology System: MOSFET(Metal Oxide)
Drain to Source voltage: 350V
Continuous drain current: 110mA
Input Capacitance (Ciss): 110pF
Operating temperature range: -55 to 150C
Field-effect transistor type: N-CH
Drain to Source on-state resistance: 15Ohm
Drive Voltage (Max Rds On, Min Rds On): 3|10V
