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Type: Switching Diode
Speed: Fast Recovery =< 500ns > 200mA(Io)
Diode type: Standard
Mounting Type: Chassis Mount
Diode Configuration: 2Independence
Circuit configuration: Dual Anti Parallel
Reverse recovery time: 180ns
Average rectified current: 100A
Operating temperature range: -55 to 175C
Spannung – DC Reverse Vr Max: 600V
Repetitive peak reverse voltage: 600V
Spannung – Vorwärts (Vf) Max: 1.8V@100A
Number of poles of the contact point: 4
最大非繰り返しサージ電流: 1000A
Current - Average Rectified Io per Diode: 100A
Current - Reverse Leakage with Vr Applied: 250uA@600V
