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Type: Schottky Diode
Speed: No Recovery Time > 500mA(Io)
Diode type: Silicon Carbide Schottky
Mounting Type: Chassis Mount
Diode Configuration: 2Independence
Circuit configuration: Dual Anti Parallel
Reverse recovery time: 0ns
Average rectified current: 50A
Spannung – DC Reverse Vr Max: 1200V
Repetitive peak reverse voltage: 1200V
Spannung – Vorwärts (Vf) Max: 1.8V@50A
Number of poles of the contact point: 4
最大非繰り返しサージ電流: 650A
Current - Average Rectified Io per Diode: 50A
Current - Reverse Leakage with Vr Applied: 1mA@1200V
